Thyristors GTO Thyristors FG2000JV-90DA

Parameter

Level

Value

Unit

Supply situation

Discontinued

Repetitive peak off state voltage

Max

4500

Repetitive controllable on-state current

Max

2000

Turn-off time

Max

μＳ

Package type

Press Pack φ63

Surge on-state current

Max

13000

Gate trigger current

Max

2500

Junction temperature

Max

125

℃

Feb.1999 APPLICATION Inverters, Converters, DC choppers, Induction heating, DC to DC converters. OUTLINE DRAWING Dimension in mm MITSUBISHI GATE TURN-OFF THYRISTORS FG2000JV-90DA HIGH POWER INVERTER USE PRESS PACK TYPE FG2000JV-90DA A A A kA A2s A/µs V V A A W kW W W °C °C kN g ITQRM IT(RMS) IT(AV) ITSM I2t diT/dt VFGM VRGM IFGM IRGM PFGM PRGM PFG(AV) PRG(AV) Tj Tstg — — 2000 940 600 13 7 × 105 500 10 17 50 700 250 23.8 50 150 –40 ~ +125 –40 ~ +150 18 ~ 24 760 VRRM VRSM VR(DC) VDRM VDSM VD(DC) V V V V V V 90DA 17 17 17 4500 4500 3600 + : VGK = –2V AUXILIARY CATHODE CONNECTOR (RED) 356 ± 8 GATE (WHITE) φ 3.5 ± 0.2 DEPTH 2.2 ± 0.2 CATHODE 0.4 min 0.4 min TYPE NAME ANODE φ 63 ± 0.5 φ 63 ± 0.5 φ 93 max 26 ± 0.5 φ 3.5 ± 0.2 DEPTH 2.2 ± 0.2 ¡ITQRM Repetitive controllable on-state current ............. 2000A ¡IT(AV) Average on-state current ...................... 600A ¡VDRM Repetitive peak off state voltage ........ 4500V ¡Anode short type MAXIMUM RATINGS Voltage class Symbol Repetitive peak reverse voltage Non-repetitive peak reverse voltage DC reverse voltage Repetitive peak off-state voltage+ Non-repetitive peak off-state voltage+ DC off-state voltage+ Parameter Unit Symbol Parameter Conditions Ratings Unit Repetitive controllable on-state current RMS on-state current Average on-state current Surge (non-repetitive) on-state current Current-squared, time integration Critical rate of rise of on-state current Peak forward gate voltage Peak reverse gate voltage Peak forward gate current Peak gate reverse current Peak forward gate power dissipation Peak reverse gate power dissipation Average forward gate power dissipation Average reverse gate power dissipation Junction temperature Storage temperature Mounting force required Weight VD = 2250V, VDM = 3375V, Tj = 125°C, CS = 4.0µF, LS = 0.3µH f = 60Hz, sine wave θ = 180°, Tf = 91°C One half cycle at 60Hz One cycle at 60Hz VD = 2250V, IGM = 30A, Tj = 125°C Recommended value 20 Standard value Feb.1999 Tj = 125°C, ITM = 2000A, Instantaneous measurment Tj = 125°C, VRRM Applied Tj = 125°C, VDRM Applied, VGK = –2V Tj = 125°C, VRG = 17V Tj = 125°C, VD = 2250V, VGK = –2V Tj = 125°C, ITM = 2000A, IGM = 30A, VD = 2250V Junction to fin DC METHOD : VD = 24V, RL = 0.1Ω, Tj = 25°C MITSUBISHI GATE TURN-OFF THYRISTORS FG2000JV-90DA HIGH POWER INVERTER USE PRESS PACK TYPE V mA mA mA V/µs µs A V A °C/W VTM IRRM IDRM IRG dv/dt tgt IGQM VGT IGT Rth(j-f) tgq Tj = 125°C, ITM = 2000A, VD = 2250V, VDM = 3375V, diGQ/dt = –30A/µs, VRG = 17V, CS = 4.0µF, LS = 0.3µH — — 30 µs — — — — — — 570 — — — — — — — 1000 — — — — — 100 2 3 5 7 101 8 4 4 4 5 7 10 2 3 2 12 16 20 6 2 10 14 18 0 01234567 104 7 5 3 2 103 7 5 3 2 102 7 5 3 2 101 Tj = 125°C 100 10–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 102 7 5 3 2 101 7 5 3 2 7 5 3 2 10–1 VFGM = 10V VGT = 1.5V PFG(AV) = 50W IFGM = 50A Tj = 25°C PFGM = 250W IGT = 2.5A 0.025 0 10–3 2 3 5 710–2 100 2 3 5 7101 2 3 5 710–1 2 3 5 7 100 0.010 0.015 0.020 0.005 ON-STATE CURRENT (A) ON-STATE VOLTAGE (V) MAXIMUM ON-STATE CHARACTERISTIC SURGE ON-STATE CURRENT (kA) CONDUCTION TIME (CYCLES AT 60Hz) RATED SURGE ON-STATE CURRENT THERMAL IMPEDANCE (°C/W) TIME (s) MAXIMUM THERMAL IMPEDANCE CHARACTERISTIC (JUNCTION TO FIN) GATE VOLTAGE (V) GATE CURRENT (mA) GATE CHARACTERISTICS 3.5 100 100 100 — 10 — 1.5 2.5 0.017 PERFORMANCE CURVES On-state voltage Repetitive peak reverse current Repetitive peak off-state current Reverse gate current Critical rate of rise of off-state voltage Turn-on time Peak gate turn-off current Gate trigger voltage Gate trigger current Thermal resistance ELECTRICAL CHARACTERISTICS Symbol Parameter Test conditions Limits Min Typ Unit Max Turn-off time Feb.1999 MITSUBISHI GATE TURN-OFF THYRISTORS FG2000JV-90DA HIGH POWER INVERTER USE PRESS PACK TYPE 0 400 800 1200 1600 2000 200 600 1000 1400 1800 0 600 100 200 300 400 500 120° 180° 60° 90° θ 360° 0 200 600 400 1000 800 1200 1400 1600 1800 2200 2000 2400 0 200 400 600 800 1000 DC 270° θ = 30° 120° 180° 60° 90° 360° θ 60 70 80 90 100 110 120 130 140 0 200 400 600 800 1000 θ = 30° 60° 90° 120° DC 270° 360° θ 180° 0 2 4 6 8 10 12 14 16 0 10 20 30 40 60 50 tgt td IT = 2000A VD = 2250V diT/dt = 500A/µs diG/dt = 10A/µs Tj = 125°C 60 70 80 90 100 110 120 130 140 0 100 200 300 400 500 600 θ 360° θ = 30° 60° 90° 120° 180° 8 6 5 3 1 0 –40 0 40 80 120 160 2 4 7 VD = 24V RL = 0.1Ω IGT VGT θ = 30° DC METHOD ON-STATE POWER DISSIPATION (W) AVERAGE ON-STATE CURRENT (A) MAXIMUM ON-STATE POWER DISSIPATION CHARACTERISTICS (SINGLE-PHASE HALF WAVE) FIN TEMPERATURE (°C) AVERAGE ON-STATE CURRENT (A) ALLOWABLE FIN TEMPERATURE VS. AVERAGE ON-STATE CURRENT (SINGLE-PHASE HALF WAVE) FIN TEMPERATURE (°C) AVERAGE ON-STATE CURRENT (A) ALLOWABLE FIN TEMPERATURE VS. AVERAGE ON-STATE CURRENT (RECTANGULAR WAVE) GATE TRIGGER CURRENT (A), GATE TRIGGER VOLTAGE (V) JUNCTION TEMPERATURE (°C) GATE TRIGGER CURRENT, GATE TRIGGER VOLTAGE VS. JUNCTION TEMPERATURE (MAXIMUM) TURN ON TIME tgt, TURN ON DELAY TIME td (µs) TURN ON GATE CURRENT (A) TURN ON TIME, TURN ON DELAY TIME VS. TURN ON GATE CURRENT (TYPICAL) ON-STATE POWER DISSIPATION (W) AVERAGE ON-STATE CURRENT (A) MAXIMUM ON-STATE POWER DISSIPATION CHARACTERISTICS (RECTANGULAR WAVE) RESISTIVE, INDUCTIVE LOAD RESISTIVE, INDUCTIVE LOAD RESISTIVE, INDUCTIVE LOAD RESISTIVE, INDUCTIVE LOAD Feb.1999 MITSUBISHI GATE TURN-OFF THYRISTORS FG2000JV-90DA HIGH POWER INVERTER USE PRESS PACK TYPE 700 600 500 400 300 200 0 500 1000 1500 2000 2500 VD = 2250V VDM = 3375V diGQ/dt = –30A/µs VRG = 17V CS = 4.0µF LS = 0.3µH Tj = 125°C 50 40 30 20 10 0 10 20 30 40 50 60 tgq ts VD = 2250V VDM = 3375V IT = 2000A VRG = 17V CS = 4.0µF LS = 0.3µH Tj = 125°C 800 700 600 500 400 30010 20 30 40 50 60 VD = 2250V VDM = 3375V IT = 2000A VRG = 17V CS = 4.0µF LS = 0.3µH Tj = 125°C 30 25 20 15 10 5 0 500 1000 1500 2000 2500 tgq ts VD = 2250V VDM = 3375V diGQ/dt = –30A/µs VRG = 17V CS = 4.0µF LS = 0.3µH Tj = 125°C 0 0.8 1.6 2.4 0.4 1.2 2.0 0 800 2400 400 1200 1600 2000 VD = 2250V IGM = 30A diG/dt = 10A/µs CS = 4.0µF RS = 5Ω Tj = 125°C diT/dt = 300A/µs 200A/µs 100A/µs 0 2.0 4.0 6.0 1.0 3.0 5.0 0 800 2400 400 1200 1600 2000 6µF 4µF CS = 2µF VD = 2250V VDM = 3375V diGQ/dt = –30A/µs VRG = 17V LS = 0.3µH Tj = 125°C RATE OF RISE OF TURN OFF GATE CURRENT (A/µs) TURN OFF GATE CURRENT (A) RATE OF RISE OF TURN OFF GATE CURRENT (A/µs) TURN OFF GATE CURRENT VS. RATE OF RISE OF GATE CURRENT (TYPICAL) SWITCHING ENERGY Eon (J/P) TURN ON CURRENT (A) TURN ON SWITCHING ENERGY (MAXIMUM) TURN OFF GATE CURRENT (A) TURN OFF CURRENT (A) TURN OFF GATE CURRENT VS. TURN OFF CURRENT (TYPICAL) SWITCHING ENERGY Eoff (J/P) TURN OFF CURRENT (A) TURN OFF SWITCHING ENERGY (MAXIMUM) TURN OFF TIME tgq, TURN OFF STORAGE TIME ts (µs) TURN OFF CURRENT (A) TURN OFF TIME, TURN OFF STORAGE TIME VS. TURN OFF CURRENT (TYPICAL) TURN OFF TIME tgq, TURN OFF STORAGE TIME ts (µs) TURN OFF TIME, TURN OFF STORAGE TIME VS. RATE OF RISE OF TURN OFF GATE CURRENT (TYPICAL)

Thyristor FG1500B-90DA, MITSUBISHI FG1000BV-90DA SCR Thyristor, FG2000JV-90DA, FG2000FX-50DA, FG3300AH-50DA, FG3000GX-90DA

Thyristors GTO Thyristors FG2000JV-90DA